Αριθμός εξαρτήματος RM8N650LD-T Κατασκευαστής Rectron Κατηγορίες MOSFET RoHS Φύλλο δεδομένων RM8N650LD-T Περιγραφή MOSFET D-PAK MOSFET
Κατασκευαστής Rectron Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 80 W Qg - Gate Charge 22 nC Rds On - Drain-Source Resistance 540 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V