RM6N800LD-T

Αριθμός εξαρτήματος: RM6N800LD-T

Κατασκευαστής: Rectron

Κατηγορίες: MOSFET

RoHS

Φύλλο δεδομένων: RM6N800LD-T

Περιγραφή: MOSFET D-PAK MOSFET

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ΠΡΟΔΙΑΓΡΑΦΕΣ

Κατασκευαστής: Rectron

Κατηγορίες: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TO-252-3

Packaging: Reel

Pd - Power Dissipation: 98 W

Qg - Gate Charge: 24 nC

Rds On - Drain-Source Resistance: 900 mOhms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 3 V

Κατηγορία Porduct

Τελευταίες Κριτικές

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Teşekkürler

Ashir Hussain

Takes 8 days to Japan. Good!

Alex Fragkos

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

Decent quality, not минвелл certainly, but enough decent

TEIXEIRA

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Andrzej Piwowarczyk

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