Αριθμός εξαρτήματος 2SA1182-GR,LF Κατασκευαστής Toshiba Κατηγορίες Bipolar Transistors - BJT RoHS Φύλλο δεδομένων 2SA1182-GR,LF Περιγραφή Bipolar Transistors - BJT PNP TRANSISTOR
Κατασκευαστής Toshiba Κατηγορίες Bipolar Transistors - BJT Collector- Base Voltage VCBO - 35 V Collector- Emitter Voltage VCEO Max - 30 V Collector-Emitter Saturation Voltage - 0.1 V Configuration Single Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 200 MHz Maximum DC Collector Current - 500 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SC-59-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Qualification AEC-Q101 Series 2SA1182 Transistor Polarity PNP