Αριθμός εξαρτήματος ZHB6790TA Κατασκευαστής Diodes Incorporated Κατηγορίες Bipolar Transistors - BJT RoHS Φύλλο δεδομένων ZHB6790TA Περιγραφή Bipolar Transistors - BJT H-Bridge-40V
Κατασκευαστής Diodes Incorporated Κατηγορίες Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage - 0.75 V Configuration Quad Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 100 MHz, 150 MHz Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2000 mW Series ZHB6790 Transistor Polarity NPN