Αριθμός εξαρτήματος 2SA1943N(S1,E,S) Κατασκευαστής Toshiba Κατηγορίες Bipolar Transistors - BJT RoHS Φύλλο δεδομένων 2SA1943N(S1,E,S) Περιγραφή Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
Κατασκευαστής Toshiba Κατηγορίες Bipolar Transistors - BJT Collector- Base Voltage VCBO - 230 V Collector- Emitter Voltage VCEO Max - 230 V Collector-Emitter Saturation Voltage - 1.5 V Configuration Single Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 30 MHz Maximum DC Collector Current - 15 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-3P-3 Packaging Tube Pd - Power Dissipation 150 W Series 2SA Transistor Polarity PNP