Αριθμός εξαρτήματος MJ11013 TIN/LEAD Κατασκευαστής Central Semiconductor Κατηγορίες Bipolar Transistors - BJT RoHS Φύλλο δεδομένων MJ11013 TIN/LEAD Περιγραφή Bipolar Transistors - BJT PNP 30A 200W 90Vcbo 90Vceo 20A 30A
Κατασκευαστής Central Semiconductor Κατηγορίες Bipolar Transistors - BJT Collector- Base Voltage VCBO 90 V Collector- Emitter Voltage VCEO Max 90 V Collector-Emitter Saturation Voltage 4 V Configuration Single Emitter- Base Voltage VEBO - Gain Bandwidth Product fT 4 MHz Maximum DC Collector Current - Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-3-2 Packaging Tube Pd - Power Dissipation 200 W Series MJ11013 Transistor Polarity PNP