Αριθμός εξαρτήματος IKA08N65H5 Κατασκευαστής Infineon Technologies Κατηγορίες IGBT Transistors RoHS Φύλλο δεδομένων IKA08N65H5 Περιγραφή IGBT Transistors IGBT PRODUCTS
Κατασκευαστής Infineon Technologies Κατηγορίες IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 10.8 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 FP Packaging Tube Pd - Power Dissipation 31.2 W Series Trenchstop 5 H5 Technology SI