Αριθμός εξαρτήματος R6006JND3TL1 Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET RoHS Φύλλο δεδομένων R6006JND3TL1 Περιγραφή MOSFET 600V N-CH 6A POWER
Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 86 W Qg - Gate Charge 15.5 nC Rds On - Drain-Source Resistance 936 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V