Αριθμός εξαρτήματος QH8K22TCR Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET RoHS Φύλλο δεδομένων QH8K22TCR Περιγραφή MOSFET 40V N-CHANNEL DUAL
Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 2.5 W Qg - Gate Charge 2.6 nC Rds On - Drain-Source Resistance 46 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V