Αριθμός εξαρτήματος QH8MB5TCR Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET RoHS Φύλλο δεδομένων QH8MB5TCR Περιγραφή MOSFET 40V N&P-CHANNEL
Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4.5 A, 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 17.2 nC Rds On - Drain-Source Resistance 44 mOhms, 41 mOhms Technology SI Transistor Polarity N-Channel, P-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V