Αριθμός εξαρτήματος SI1040X-T1-GE3 Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET RoHS Φύλλο δεδομένων SI1040X-T1-GE3 Περιγραφή MOSFET -8V Vds V Vgs SC89-6
Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 430 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-89-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 174 mW Qg - Gate Charge - Rds On - Drain-Source Resistance 625 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Vds - Drain-Source Breakdown Voltage 8 V Vgs - Gate-Source Voltage - Vgs th - Gate-Source Threshold Voltage -