Αριθμός εξαρτήματος FQB1P50TM Κατασκευαστής onsemi / Fairchild Κατηγορίες MOSFET RoHS Φύλλο δεδομένων FQB1P50TM Περιγραφή MOSFET 500V P-Channel QFET
Κατασκευαστής onsemi / Fairchild Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.13 W Qg - Gate Charge 14 nC Rds On - Drain-Source Resistance 8 Ohms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V