Αριθμός εξαρτήματος TK100S04N1L,LXHQ Κατασκευαστής Toshiba Κατηγορίες MOSFET RoHS Φύλλο δεδομένων TK100S04N1L,LXHQ Περιγραφή MOSFET 180W 1MHz Automotive; AEC-Q101
Κατασκευαστής Toshiba Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case DPAK-3 Packaging Cut Tape, Reel Pd - Power Dissipation 180 W Qg - Gate Charge 76 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 2.3 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V