Αριθμός εξαρτήματος NP100P06PDG-E1-AY Κατασκευαστής Renesas Electronics Κατηγορίες MOSFET RoHS Φύλλο δεδομένων NP100P06PDG-E1-AY Περιγραφή MOSFET LOW VOLTAGE POWER MOSFET
Κατασκευαστής Renesas Electronics Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Tube Pd - Power Dissipation 200 W Qg - Gate Charge 300 nC Rds On - Drain-Source Resistance 6 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V