Αριθμός εξαρτήματος SI1012CR-T1-GE3 Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET RoHS Φύλλο δεδομένων SI1012CR-T1-GE3 Περιγραφή MOSFET 20V Vds 8V Vgs SC75A
Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 600 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SC-75-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 240 mW Qg - Gate Charge 1.3 nC Rds On - Drain-Source Resistance 396 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV