Αριθμός εξαρτήματος SI1026X-T1-GE3 Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET RoHS Φύλλο δεδομένων SI1026X-T1-GE3 Περιγραφή MOSFET 60V Vds 20V Vgs SC89-6
Κατασκευαστής Vishay Semiconductors Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 500 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-89-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 280 mW Qg - Gate Charge 600 pC Rds On - Drain-Source Resistance 1.4 Ohms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V