Αριθμός εξαρτήματος R6006ANDTL Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET RoHS Φύλλο δεδομένων R6006ANDTL Περιγραφή MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST
Κατασκευαστής ROHM Semiconductor Κατηγορίες MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 40 W Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V